Nonvolatile memory device and method for fabricating the same

ABSTRACT

A three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars, a plurality of gate electrodes, and a plurality of supporters. The semiconductor substrate includes a memory cell region and a contact region. The active pillars extend in the memory cell region perpendicularly to the semiconductor substrate. The gate electrodes intersect the active pillars, extend from the memory cell region to the contact region and are stacked on the semiconductor substrate. The supporters extend in the contact region perpendicularly to the semiconductor substrate to penetrate at least one or more of the gate electrodes.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of and claimspriority from U.S. patent application Ser. No. 17/497,417, filed Oct. 8,2021, which is a continuation application of and claims priority fromU.S. patent application Ser. No. 16/708,482, filed Dec. 10, 2019, whichis a continuation application of and claims priority from U.S. patentapplication Ser. No. 15/634,597, now U.S. Pat. No. 10,546,872, filed onJun. 27, 2017, which is a continuation application of and claimspriority from U.S. patent application Ser. No. 14/973,182, filed on Dec.17, 2015, now U.S. Pat. No. 9,735,170, which is a continuationapplication of U.S. patent application Ser. No. 14/027,599, filed onSep. 16, 2013, now U.S. Pat. No. 9,245,839, which is a continuationapplication of U.S. patent application Ser. No. 12/592,869, filed onDec. 3, 2009, now U.S. Pat. No. 8,541,831, which claims the benefit ofKorean Patent Application Nos. 10-2008-0121886, filed on Dec. 3, 2008,and 10-2009-0016406, filed on Feb. 26, 2009, the entire contents ofwhich are hereby incorporated by reference.

BACKGROUND

The present inventive concept relates to nonvolatile memory devices andmethods for fabricating the same, and more particularly, tothree-dimensional nonvolatile memory devices capable of reducing theresistance of gate electrodes and preventing process defects, andmethods for fabricating the same.

Nonvolatile memory devices can electrically erase and write (or program)data and can retain data even when the power supply is interrupted.Accordingly, the use of nonvolatile memory devices is increasing invarious fields.

Nonvolatile memory devices include various types of memory celltransistors. Nonvolatile memory devices are classified into NAND-typenonvolatile memory devices and a NOR-type nonvolatile memory device,depending on the cell array structures. The NAND-type nonvolatile memorydevice and the NOR-type nonvolatile memory device have the advantagesand disadvantages of high integration and high operation speed.

In particular, the NAND-type nonvolatile memory device is advantageousfor high integration because it includes a cell string structure havinga plurality of memory cell transistors connected in series. Also, theNAND-type nonvolatile memory device has a much higher data update speedthan the NOR-type nonvolatile memory device because it uses an operationscheme of simultaneously changing data stored in a plurality of memorycell transistors. Due to such a high integration level and high updatespeed, the NAND-type nonvolatile memory device is widely used inportable electronic products requiring mass storage, such as digitalcameras and MP3 players.

Research is being conducted to facilitate and promote the advantages ofNAND-type nonvolatile memory devices. Accordingly, a three-dimensionalnonvolatile memory device is being developed.

SUMMARY OF THE INVENTIVE CONCEPT

Embodiments of the inventive concept provide three-dimensionalnonvolatile memory devices capable of reducing the resistance of gateelectrodes, and methods for fabricating the same.

Embodiments of the inventive concept also provide three-dimensionalnonvolatile memory devices capable of preventing process defects, andmethods for fabricating the same.

According to one aspect, the inventive concept is directed to anonvolatile memory device including: a semiconductor substrate includinga memory cell region and a contact region; a plurality of active pillarsextending in the memory cell region perpendicular to the semiconductorsubstrate; a plurality of gate electrodes that intersect the activepillars, extend from the memory cell region to the contact region andare stacked on the semiconductor substrate; and a plurality ofsupporters extending in the contact region perpendicular to thesemiconductor substrate to penetrate at least one or more of the gateelectrodes.

In one embodiment, the supporters are formed of dielectric material orsemiconductor material.

In one embodiment, the supporters penetrate all or some of the gateelectrodes.

In one embodiment, the gate electrodes are stacked on the semiconductorsubstrate, with an interlayer dielectric therebetween, and the areas ofthe gate electrodes decrease with an increase in the distance from thesemiconductor substrate.

In one embodiment, the gate electrodes are stacked on the semiconductorsubstrate, with an interlayer dielectric therebetween; the upper gateelectrode among the gate electrodes exposes an edge portion of the lowergate electrode; and the supporters are disposed at the exposed edgeportion of the lower gate electrode.

In one embodiment, the length of the supporters decreases from thecenter of the gate electrodes toward the edge.

In one embodiment, the active pillars penetrate the gate electrodes orintersect one sidewall of the gate electrodes.

In one embodiment, the contact region is disposed around the memory cellregion.

In one embodiment, the contact region is disposed at both side portionsof the memory cell region.

In one embodiment, the active pillars are arranged two-dimensionally onthe semiconductor substrate, and the gate electrode is connected to atleast four or more of the two-dimensionally arranged active pillars orto at least two or more of the one-dimensionally arranged activepillars.

According to another aspect, the inventive concept is directed to amethod for fabricating a nonvolatile memory device including: forming astack structure, in which first and second dielectric layers withdifferent etch rates are stacked alternately at least two or more times,on a semiconductor substrate; forming active pillars connected to thesemiconductor substrate by penetrating the first and second dielectriclayers; forming trenches penetrating the stack structure between theactive pillars to form line-type stack structures; forming horizontalsupporters contacting the top surfaces of the line-type stackstructures, across the line-type stack structures adjacent to eachother; removing the second dielectric layers to form openings betweenthe first dielectric layers; and forming conductive patterns locally inthe openings.

In one embodiment, the horizontal supporters maintain the intervalbetween the line-type stack structures. In one embodiment, thehorizontal supporters are line patterns that intersect the top surfacesof the line-type stack structures.

In one embodiment, the horizontal supporters are patterns that arelocally formed across the top surfaces of the line-type stack structuresadjacent to each other.

In one embodiment, the forming of the horizontal supporters furthercomprises filling the trenches with a sacrificial dielectric layer andforming the horizontal supporters contacting the top surfaces of thesacrificial dielectric layer and the line-type stack structure. In oneembodiment, the horizontal supporters are formed of a material having anetch selectivity with respect to the second dielectric layer and thesacrificial dielectric layer. In one embodiment, the method furthercomprises, before the forming of the openings, removing the sacrificialdielectric layer to expose the sidewalls of the line-type stackstructures. In one embodiment, the sacrificial dielectric layer isformed of a material having an etch selectivity with respect to thefirst dielectric layer.

In one embodiment, the method further comprises forming verticalsupporters penetrating the edge portions of the first dielectric layers.

In one embodiment, the forming of the conductive patterns fills theopenings between the vertically-adjacent first dielectric layers, andthe conductive patterns surround the active pillars and the verticalsupporters.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other features and advantages of the inventive conceptwill be apparent from the more particular description of preferredembodiments of the inventive concept, as illustrated in the accompanyingdrawings in which like reference characters refer to the same partsthroughout the different views. The drawings are not necessarily toscale, emphasis instead being placed upon illustrating the principles ofthe inventive concept. In the drawings, the thickness of layers andregions are exaggerated for clarity.

FIG. 1 is a circuit diagram of a nonvolatile memory device according toexemplary embodiments of the inventive concept.

FIG. 2A is a plan view of a nonvolatile memory device according to afirst exemplary embodiment of the inventive concept.

FIGS. 2B and 2C are plan views of nonvolatile memory devices accordingto modifications of the first exemplary embodiment of the inventiveconcept.

FIG. 3 is a sectional view of the nonvolatile memory device according tothe first exemplary embodiment of the inventive concept, which is takenalong a line I-I′ of FIGS. 2A to 2C.

FIG. 4 is a plan view of a nonvolatile memory device according to asecond exemplary embodiment of the inventive concept.

FIG. 5 is a sectional view of the nonvolatile memory device according tothe second exemplary embodiment of the inventive concept, which is takenalong a line of FIG. 4.

FIG. 6 is a plan view of a nonvolatile memory device according to athird exemplary embodiment of the inventive concept.

FIG. 7 is a sectional view of the nonvolatile memory device according tothe third exemplary embodiment of the inventive concept, which is takenalong lines A-A′ and B-B′ of FIG. 6.

FIG. 8 is a plan view of a nonvolatile memory device according to aforth exemplary embodiment of the inventive concept.

FIG. 9 is a sectional view of the nonvolatile memory device according tothe forth exemplary embodiment of the inventive concept, which is takenalong a line I-I′ of FIG. 8.

FIG. 10 is a plan view of a nonvolatile memory device according to afifth exemplary embodiment of the inventive concept.

FIG. 11 is a sectional view of the nonvolatile memory device accordingto the fifth exemplary embodiment of the inventive concept, which istaken along a line of FIG. 10.

FIG. 12 is a plan view of a nonvolatile memory device according to asixth exemplary embodiment of the inventive concept.

FIGS. 13A to 13G are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the first andforth exemplary embodiments of the inventive concept.

FIGS. 14A to 14F are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the second andfifth exemplary embodiments of the inventive concept.

FIGS. 15A to 15E are sectional views illustrating another method forfabricating the nonvolatile memory devices according to the second andfifth exemplary embodiments of the inventive concept.

FIGS. 16A to 16E are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the third andsixth exemplary embodiments of the inventive concept.

FIGS. 17 to 24 are sectional views illustrating a method for fabricatinga nonvolatile memory device according to another exemplary embodiment ofthe inventive concept.

FIG. 25 is a block diagram of a memory system including a nonvolatilememory device according to exemplary embodiments of the inventiveconcept.

FIG. 26 is a block diagram of a memory card provided with a flash memorydevice according to an exemplary embodiment of the inventive concept.

FIG. 27 is a block diagram of an information processing system providedwith a flash memory system according to the inventive concept.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Preferred embodiments of the inventive concept will be described belowin more detail with reference to the accompanying drawings. Theinventive concept may, however, be embodied in different forms andshould not be construed as limited to the embodiments set forth herein.Rather, these embodiments are provided so that this description will bethorough and complete, and will fully convey the inventive concept tothose skilled in the art. Throughout the specification, like referencenumerals refer to like elements.

In the following description, the technical terms are used only fordescribing specific exemplary embodiments while not limiting theinventive concept. The terms of a singular form may include plural formsunless otherwise specified. The meaning of “include,” “comprise,”“including,” or “comprising,” specifies a property, a region, a fixednumber, a step, a process, an element and/or a component but does notexclude other properties, regions, fixed numbers, steps, processes,elements and/or components. It will also be understood that when a layer(or film) is referred to as being “on” another layer or substrate, itcan be directly on the other layer or substrate, or intervening layersmay also be present.

Additionally, the embodiments in the detailed description will bedescribed with reference to sectional views or plan views as idealexemplary views of the inventive concept. In the drawings, thedimensions of layers and regions are exaggerated for clarity ofillustration. Accordingly, shapes of the exemplary views may be modifiedaccording to manufacturing techniques and/or allowable errors.Therefore, the embodiments of the inventive concept are not limited tothe specific shape illustrated in the exemplary views, but may includeother shapes that may be created according to manufacturing processes.For example, although an etched region is illustrated as being angled,it may also be rounded. Areas exemplified in the drawings have generalproperties, and are used to illustrate specific shapes of deviceregions. Thus, these should not be construed as limiting the scope ofthe inventive concept.

Hereinafter, exemplary embodiments of the inventive concept will bedescribed in detail with reference to the accompanying drawings.Nonvolatile memory devices according to the exemplary embodiments of theinventive concept have a three-dimensional structure.

FIG. 1 is a circuit diagram of a nonvolatile memory device according toexemplary embodiments of the inventive concept.

Referring to FIG. 1, a nonvolatile memory device according to exemplaryembodiments of the inventive concept includes a cell array including aplurality of strings STR. The cell array includes bit lines BL1˜BL3,word lines WL1˜WL4, upper and lower select lines USL1˜USL3 and LSL, anda common source line CSL. The strings STR are provided between thecommon source line CSL and the bit lines BL1˜BL3.

Each string STR includes upper and lower select transistors UST and LST,and memory cell transistors MC that are connected in series between theupper and lower select transistors UST and LST. The drains of the upperselect transistors UST are connected to the bit lines BL1˜BL3, and thesources of the lower select transistors LST are connected in common tothe common source line CSL.

The upper select transistors UST are connected to the upper select linesUSL1˜USL3, and the lower select transistors LST are connectedrespectively to the lower select lines LSL. The memory cells MC areconnected respectively to the word lines WL1˜WL4.

The cell array has a three-dimensional structure. That is, the stringsSTR are configured in such a way that the memory cells MC are connectedin series in a Z-axis direction perpendicular to an XY plane parallel tothe top surface of a semiconductor substrate. Accordingly, the channelof the memory cell transistors MC and the select transistors UST and LSTmay be formed perpendicular to the XY plane.

In the three-dimensional nonvolatile memory device, ‘m’ memory cells maybe formed on each XY plane, and XY planes with ‘m’ memory cells may bestacked in ‘n’ layers (where ‘m’ and ‘n’ are natural numbers).

Hereinafter, a nonvolatile memory device according to a first exemplaryembodiment of the inventive concept will be described with reference toFIGS. 2A to 2C and FIG. 3.

FIG. 2A is a plan view of a nonvolatile memory device according to afirst exemplary embodiment of the inventive concept. FIGS. 2B and 2C areplan views of nonvolatile memory devices according to modifications ofthe first exemplary embodiment of the inventive concept. FIG. 3 is asectional view of the nonvolatile memory device according to the firstexemplary embodiment of the inventive concept, which is taken along aline I-I′ of FIGS. 2A to 2C.

Referring to FIGS. 2A and 3, interlayer dielectrics 110 and gateelectrodes LSL, WL and USL are alternately stacked on a semiconductorsubstrate 100. More specifically, the semiconductor substrate 100includes a memory cell region MR and a contact region CR that isdisposed on the edge portion of the memory cell region MR. In the firstexemplary embodiment of the inventive concept, the contact region CR isdisposed around the memory cell region MR. In exemplary embodiments ofthe inventive concept, the memory cell region MR and the contact regionCR are regions for gate electrodes.

An impurity region (or well) 102, provided as a common source line (CSLof FIG. 1), is formed in the semiconductor substrate 100, and interlayerdielectrics 110 and gate electrodes LSL, WL and USL are alternatelystacked on the impurity region 102. Among the stacked gate electrodesLSL, WL and USL, the lowermost and uppermost gate electrodes LSL and USLare used as select lines, and the other gate electrodes WL are used asword lines.

The lower select line LSL (i.e., the lowermost gate electrode) may beformed in the shape of a plate or in the shape of lines separated fromeach other. The upper select line USL (i.e., the uppermost gateelectrode) may be formed in the shape of lines separated from eachother. The word lines WL between the lower select line LSL and the upperselect line USL may be formed in the shape of a plate. Also, the areasof the gate electrodes LSL, WL, and USL may decrease with an increase inthe distance from the semiconductor substrate 100.

More specifically, the gate electrodes LSL, WL and USL may extend fromthe memory cell region MR to the contact region CR. The gate electrodesLSL, WL and USL of the memory cell region MR and the gate electrodes ofthe contact region CR may be formed of different conductive materials.That is, the gate electrodes LSL, WL and USL of the memory cell regionMR may be formed of polysilicon, while the gate electrodes LSL, WL andUSL of the contact region CR may comprise metal material that is lowerin specific resistance than polysilicon. For example, the gateelectrodes LSL, WL and USL of the contact region CR may be formed oftungsten (W), aluminum (Al), titanium (Ti), or tantalum (Ta).Accordingly, the resistance of the gate electrodes LSL, WL and USL canbe reduced in comparison with the case where the gate electrodes LSL, WLand USL are formed of polysilicon. Therefore, a signal delay due to anincrease in the resistance of the gate electrodes LSL, WL and USL can bereduced, thus making it possible to improve the operation speed of thenonvolatile memory device. For the uppermost line-shaped gate electrodesUSL, both the memory cell region MR and the contact region MR maycomprise metal material.

Active pillars PL are formed in the memory cell region MR perpendicularto the plane of the semiconductor substrate 100. The active pillars PLare formed of semiconductor material. The active pillars PL maypenetrate the gate electrodes LSL, WL and USL of the memory cell regionMR. The pillars PL may be spaced apart from each other, and may bearranged in a matrix configuration on a plane. Also, the active pillarsPL may be electrically connected to the impurity region 102 of thesemiconductor substrate 100 by penetrating the gate electrodes LSL, WLand USL. The active pillars PL are provided for the channels oftransistors, which correspond to the strings of the nonvolatile memorydevice according to the embodiments of the inventive concept. That is,the channels of memory cell transistors and select transistors (LST, USTand MC of FIG. 1) in each string may be electrically connected throughthe active pillars PL.

Also, in the memory cell region MR, a charge storage layer CS is formedto surround each of the active pillars PL. That is, the charge storagelayer CS is disposed between the active pillar PL and the gateelectrodes LSL, WL and USL. Also, bit lines are electrically connectedon the active pillars PL.

The gate electrodes LSL, WL and USL of the contact region CR may bestacked in the shape of a stair. That is, the areas of the plate-typegate electrodes LSL, WL and USL stacked on the semiconductor substrate100 may decrease with an increase in the distance from the semiconductorsubstrate 100, so that the upper gate electrode may be stacked to exposethe end portion of the lower gate electrode. That is, the end portion ofeach of the gate electrodes LSL, WL and USL is not aligned with thesidewalls of the upper and lower gate electrodes LSL, WL and USL.Therefore, the gate electrodes LSL, WL and USL of the contact region CRmay be electrically connected through contacts CT to global word linesGWL.

Also, in the contact region CR, supporters SP may penetrate some of thegate electrodes LSL, WL and USL. The supporters SP may serve to supportthe edge portions of the interlayer dielectrics 110 and the gateelectrodes LSL, WL and USL that are alternately stacked on thesemiconductor substrate 100. Specifically, the supporters SP may beformed in a pillar shape to penetrate the gate electrodes LSL, WL andUSL and the interlayer dielectrics 110. The supporters SP may be formedof dielectric material, so that they may be electrically connected tothe interlayer dielectrics 110 between the gate electrodes LSL, WL andUSL. In the first exemplary embodiment of the inventive concept, thesupporters SP may penetrate the gate electrodes LSL and WL (i.e., allbut the uppermost gate electrode USL). Also, in the first exemplaryembodiment of the inventive concept, the supporters SP may have the samelength. The supporters SP of the same length may be formed in the edgeportion of the memory cell region MR. That is, the supporters SP may beformed in corner portion of the memory cell region MR. As well as in thecorner portion of the memory cell region MS, the supporters SP may beformed in certain regions of the edge portions of the gate electrodesLSL, WL and USL in such a way that they are spaced apart from eachother.

Referring to FIGS. 2B, 2C and 3, the supporters SP according to thefirst exemplary embodiment of the inventive concept may have variousshapes instead of the shape of a cylindrical pillar.

That is, as illustrated in FIG. 2B, supporters SP′ may be pillars thatare line-shaped in the plan view. The line-shaped supporters SP′ aredisposed in the contact region MR of the gate electrodes LSL, WL andUSL, and are formed around the memory cell region MR. The line-shapedsupporters SP′ are spaced apart from each other, and may have the samelength or different lengths.

Also, as illustrated in FIG. 2C, supporters SP″ may have line patternsthat are connected to each other and extend in different directions onthe plane. The supporters SP″ may be formed to surround the cornerportions of the memory cell region MR as illustrated in FIG. 2C.

Hereinafter, a nonvolatile memory device according to a second exemplaryembodiment of the inventive concept will be described with reference toFIGS. 4 and 5. In describing the second exemplary embodiment, detaileddescription of elements of the first exemplary embodiment will not berepeated.

FIG. 4 is a plan view of a nonvolatile memory device according to asecond exemplary embodiment of the inventive concept. FIG. 5 is asectional view of the nonvolatile memory device according to the secondexemplary embodiment of the inventive concept, which is taken along aline of FIG. 4.

Referring to FIGS. 4 and 5, in a nonvolatile memory device according toa second exemplary embodiment of the inventive concept, gate electrodesLSL, WL and USL have the shape of a line that extends from a memory cellregion MR to a contact region CR. That is, the memory cell region MRcorresponds to a central portion of the line-shaped gate electrodes LSL,WL and USL, and the contact region CR corresponds to one or both endportions of the line-shaped gate electrodes LSL, WL and USL. In thedescription of the second exemplary embodiment of the inventive concept,the contact region CR corresponds to both edge portions of the memorycell region MR.

All of the line-shaped gate electrodes LSL, WL and USL of the memorycell region MR and the contact region CR may be formed of the samematerial. Alternatively, the gate electrodes LSL, WL and USL of thememory cell region MR and the gate electrodes LSL, WL and USL of thecontact region CR may be formed of different conductive materials, as inthe first exemplary embodiment. That is, all of the gate electrodes LSL,WL and USL of the memory cell region MR and the contact region CR maycomprise metal material.

Alternatively, the gate electrodes LSL, WL and USL of the memory cellregion MR may be formed of polysilicon, and the gate electrodes LSL, WLand USL of the contact region CR may comprise metal material.

Active pillars PL penetrate the gate electrodes LSL, WL and USL stackedin the memory cell region MR, and supporters SP penetrate the gateelectrodes LSL, WL and USL stacked in the contact region CR.

The active pillars PL are formed of semiconductor material, and areconnected to a semiconductor substrate 100 by penetrating the stackedgate electrodes LSL, WL and USL. A charge storage layer CS is formedaround each of the active pillars PL, and bit lines intersecting thegate electrodes LSL, WL and USL are electrically connected on the activepillars PL.

The supporters SP may be pillars formed of dielectric material, and maybe formed in both end portions of the gate electrodes LSL, WL and USL(i.e., the contact region CR) in such a way that they are spaced apartfrom the active pillars PL. Specifically, in the second exemplaryembodiment of the inventive concept, the supporters SP may be formed onone side of the active pillars PL located at the edge portion of thememory region MR, and may penetrate all of the stacked gate electrodesLSL, WL and USL. Also, the gate electrodes LSL, WL and USL of thecontact region CR may be electrically connected to global word lines GWLthrough contacts CT.

The active pillars PL of the nonvolatile memory device according to thesecond exemplary embodiment of the inventive concept may be formed onone sidewall of the gate electrodes LSL, WL and USL as illustrated inFIG. 7.

FIG. 6 is a plan view of a nonvolatile memory device according to nthird exemplary embodiment of the inventive concept. FIG. 7 is asectional view of the nonvolatile memory device according to the thirdexemplary embodiment of the inventive concept, which is taken alonglines A-A′ and B-B′ of FIG. 6.

Referring to FIGS. 6 and 7, line-shaped gate electrodes (WL, 250) arestacked, and bit lines (BL, 270) intersecting the gate electrodes (WL,250) may be disposed on the stacked gate electrodes (WL, 250). Activepillars (PL′, 224) may be formed perpendicularly to a semiconductorsubstrate 200 and intersect one sidewall of the stacked gate electrodes(WL, 250). In the third exemplary embodiment, instead of being acylindrical shape, the active pillars (PL′, 224) may be a structure thatis formed by patterning on one sidewall of the stacked gate electrodes(WL, 250). That is, the active pillars (PL′, 224) may be disposed on onesidewall of the stacked gate electrodes (WL, 250) in such a way thatthey are spaced apart from each other. The active pillars (PL′, 224)formed on one sidewall of the stacked gate electrodes (WL, 250) may beformed to face the active pillars (PL′, 224) intersecting one sidewallof the adjacent gate electrodes (WL, 250). Also, a charge storage layer245 is disposed between the top and bottom surfaces of the gateelectrodes (WL, 250) and one sidewall contacting the active pillars(PL′, 224).

Also, as in the second exemplary embodiment, supporters SP supportingthe gate electrodes (WL, 250) are formed in the contact region CR. Thesupporters SP may be circular pillars formed of dielectric material, andmay penetrate all of the stacked gate electrodes (WL, 250). Also, thegate electrodes (WL, 250) of the contact region CR may be electricallyconnected to global word lines GWL through contacts CT.

Hereinafter, nonvolatile memory devices according to exemplaryembodiments 4 to 6 of the inventive concept will be described in detail.

FIG. 8 is a plan view of a nonvolatile memory device according to afourth exemplary embodiment of the inventive concept. FIG. 9 is asectional view of the nonvolatile memory device according to the fourthexemplary embodiment of the inventive concept, which is taken along aline I-I′ of FIG. 8. In describing the fourth exemplary embodiment,detailed description of elements of other exemplary embodiments will notbe repeated.

Referring to FIGS. 8 and 9, plate-shaped gate electrodes LSL, WL and USLare formed on a semiconductor substrate 100, with interlayer dielectrics110 disposed therebetween. The plate-shaped gate electrodes LSL, WL andUSL are formed over a memory cell region MR and contact regions CRaround the memory cell region MR. The stacked gate electrodes LSL, WLand USL in the contact region CR may have a stair shape. That is, theupper gate electrode is formed to expose the lower gate electrode.Because the gate electrodes LSL, WL and USL are stacked in a stairshape, the interlayer dielectrics between the gate electrodes LSL, WLand USL may have a stair-shaped stack structure.

Active pillars PL penetrate the gate electrodes LSL, WL and USL of thememory cell region MR. Supporters SP of different lengths may be formedat the gate electrodes LSL, WL and USL of the contract region CR. Thesupporters SP are formed between the interlayer dielectrics 110 spacedapart from each other, and penetrate the gate electrodes LSL, WL and USLbetween the interlayer dielectrics 110.

The supporters SP of different lengths may be formed at each edgeportion of the plate-shaped gate electrodes LSL, WL and USL of eachlayer. The lengths of the adjacent supporters SP may decrease with anincrease in the distance from the memory cell region MR. The number ofthe gate electrodes LSL, WL and USL penetrating the supporters SPdiffers because the supporters SP are formed to different heights.Therefore, the supporters SP may penetrate all or some of the gateelectrodes LSL, WL and USL. Also, the interface between the upper andlower gate electrodes may be formed between the adjacent supporters SP.Also, the supporters SP formed to different lengths in the contactregion CR may be formed between the sidewalls of the vertically-adjacentgate electrodes gate electrodes LSL, WL and USL.

FIG. 10 is a plan view of a nonvolatile memory device according to afifth exemplary embodiment of the inventive concept. FIG. 11 is asectional view of the nonvolatile memory device according to the fifthexemplary embodiment of the inventive concept, which is taken along aline II-II′ of FIG. 10.

Referring to FIGS. 10 and 11, gate electrodes LSL, WL and USL are formedin a line shape, and active pillars PL penetrate the gate electrodesLSL, WL and USL of a memory cell region MR. Also, supporters SP ofdifferent lengths penetrate the gate electrodes LSL, WL and USL of acontact region CR. That is, the supporters SP are located at both endportions of the gate electrodes LSL, WL and USL. The supporters SP maybe formed in plurality on the same line as the active pillars PL, andthe supporters SP on the same line are spaced apart from each other. Thesupporters SP adjacent to the active pillars PL may penetrate all of thestacked gate electrodes LSL, WL and USL. Also, the number of theinterlayer dielectrics 110 and the stacked gate electrodes LSL, WL andUSL penetrated the supporters SP may decrease with an increase in thedistance of the supporters SP from the memory cell region MR.

FIG. 12 is a plan view of a nonvolatile memory device according to asixth exemplary embodiment of the inventive concept.

Referring to FIG. 12, active pillars PL′ may be formed across stackedgate electrodes LSL, WL and USL. A charge storage layer CS is formedbetween the active pillars PL′ and the gate electrodes LSL, WL and USL.Also, as in the embodiment of FIGS. 6 and 7, supporters SP of differentlengths penetrate the gate electrodes LSL, WL and USL of a contactregion CR.

Although it has been described in the first to sixth exemplaryembodiments that the supporters SP formed at the gate electrodes LSL, WLand USL of the contact region CR are pillars formed of dielectricmaterial, the supporters SP may have the same structure as the activepillars PL. That is, the supporters SP of the contact region CR may alsobe formed of semiconductor material, and the charge storage layer CSsurrounding the supporters SP may be formed between the supporters SPand the gate electrodes LSL, WL and USL. In this embodiment, because thesupporters SP of the contact region CR are not connected to the bitlines BL, they do not affect the operation of the nonvolatile memorydevice.

Hereinafter, methods for fabricating nonvolatile memory devicesaccording to exemplary embodiments of the inventive concept will bedescribed in detail.

A method for fabricating the nonvolatile memory devices according to thefirst and fourth exemplary embodiments of the inventive concept will bedescribed below in detail with reference to FIGS. 13A to 13G.

FIGS. 13A to 13G are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the first andfourth exemplary embodiments of the inventive concept. In the method forfabricating the nonvolatile memory devices according to the first andfourth exemplary embodiments, the planar structure will be describedwith reference to FIG. 2A.

Referring to FIG. 13A, interlayer dielectrics 110 and conductive layers120 are alternately stacked on a semiconductor substrate 100. Thesemiconductor substrate 100 includes a memory cell region MR and acontact region CR around the memory cell region MR. In the exemplaryembodiments of the inventive concept, the memory cell region MR and thecontact region CR are regions for gate electrodes. Also, thesemiconductor substrate 100 may include an impurity region (or well)102, and the interlayer dielectrics 110 and the conductive layers 120are formed over the semiconductor substrate 100. The interlayerdielectrics 110 may be formed of silicon oxide, silicon oxynitride, orsilicon nitride, and the conductive layers 120 may be formed ofpolysilicon. The number of the stacked conductive layers 120 may dependon the capacity of the nonvolatile memory device.

After the interlayer dielectrics 110 and the conductive layers 120 arestacked over the semiconductor substrate 100, dummy holes for supporters130 may be formed around a region for memory cells. For example, aphotolithography process is performed on the stacked interlayerdielectrics 110 and conductive layers 120 to form dummy holes in thecontact region CR. The dummy holes may penetrate the interlayerdielectrics 110 and the conductive layers 120 to expose thesemiconductor substrate 100.

The dummy holes may be formed around the memory cell region MR.Specifically, the dummy holes may be formed at the corner portions ofthe contact region CR as illustrated in FIG. 2. The planar structure ofthe dummy holes formed at the corner portions of the contact region CRmay vary as illustrated in FIGS. 2A to 2C.

Also, the dummy holes may be formed in plurality at each of the cornerportions of the contact region CR as illustrated in FIG. 8. The dummyholes increase in the distance from the memory cell region MR. Also, thepositions of the dummy holes may be the interface between upper andlower gate electrodes that will be formed through the subsequentprocess.

Referring to FIG. 13B, the dummy holes are filled with dielectricmaterial to form supporters 130. The supporters 130 may be formed of thesame material as the interlayer dielectrics 110. Also, a dielectriclayer 115 may be formed up to on the uppermost layer when the supporters130 are formed. The formed supporters 130 penetrate the stackedinterlayer dielectrics 120 and conductive layers 120 to contact thesemiconductor substrate 100.

Thereafter, a plate-shaped interlayer dielectric 110 and a conductivelayer 120 are formed across the memory cell region MR and the contactregion CR. That is, the stacked interlayer dielectrics 110 andconductive layers 120 may be patterned to form square-shaped gateelectrodes across the memory cell region MR and the contact region CR.That is, the stacked interlayer dielectrics 110 and conductive layers120 may be patterned to form a square-shaped stack structure in thememory cell region MR and the contact region CR of the semiconductorsubstrate 100. In the exemplary embodiments of the inventive concept,the stack structure means a structure where the interlayer dielectrics110 and the conductive layers 120 are alternately stacked. When thesquare-shaped stack structure is formed, the sidewalls of the stackedinterlayer dielectrics 110 and conductive layers 120 may be exposed.Alternatively, the forming of the square-shaped stack structure may beperformed before the forming of the supporters 130.

Referring to FIG. 13C, an etchant having a high etch selectivity withrespect to the conductive layers 120 is supplied to the sidewall of thesquare-shaped stack structure to remove portions of the conductivelayers 120. The etchant infiltrates from the edge to the center of thestack structure to selectively etch the conductive layers 120. Becausethe supporters 130 are spaced apart from each other in the contactregion CR, the conductive layers 120 may be removed up to the inside ofthe supporters 130. That is, through a wet etch process, the conductivelayers 120 may remain only in the memory cell region MR, and theinterlayer dielectrics 110 and the supporters 130 penetrating theinterlayer dielectrics 110 remain in the contact region CR. Theconditions for the wet etch process, such as the supply time of theetchant, the concentration of the etchant and the supply rate of theetchant, may be controlled to remove the conductive layers 120 of thecontact region CR. In this manner, after the wet etch process, theremaining conductive layers 122 may define the memory cell region MR ofthe gate electrodes.

During the removing of the conductive layers 120 of the contact regionCR through the wet etch process, a capillary force may be generated atthe interlayer dielectrics 110 due to the empty space between theinterlayer dielectrics 110. Accordingly, the upper and lower interlayerdielectrics 110 may tend to bond together. Therefore, when an etchant iscontinuously supplied between the interlayer dielectrics 110, theinterlayer dielectrics 110 may collapse. However, in the exemplaryembodiments of the inventive concept, the supporters 130 of the contactregion CR are formed perpendicularly to the interlayer dielectrics 110,thus making it possible to prevent the upper and lower interlayerdielectrics 110 from collapsing or bonding together. That is, when theconductive layers 120 of the contact region CR are removed, thesupporters 130 may serve to maintain the spacing distance between thestacked interlayer dielectrics 110.

That is, during the removing of the conductive layers 120 of the contactregion CR, the interlayer dielectrics 110, which are parallel to thesemiconductor substrate 100 and spaced apart from each other, and thesupporters 130, which are perpendicular to the semiconductor substrate100, remain in the contact region CR. That is, in the contact region CR,an empty space is formed between the interlayer dielectrics 110, and thesupporters 130 support the interlayer dielectrics 110 that are spacedapart from each other.

Referring to FIG. 13D, a metal layer 140 is deposited on the entiresurface of the stack structure from which the conductive layers 120 ofthe contact region CR have been removed. That is, the metal layer 140may fill the space between the interlayer dielectrics 110 of the contactregion CR, and may also be deposited on the top surface of the stackstructure and the semiconductor substrate 100 around the stackstructure. The metal layer 140, filling the space between the interlayerdielectrics 110 of the contact region CR, may contact the conductivelayers 120 of the memory cell region MR. The metal layer 140 may beformed of one of metal materials such as W, Al, Cu, Pt, Ru and Ir,conductive metal nitrides such as TiN, TaN and WN, conductive metaloxides such as RuO₂ and IrO₂, and a combination thereof.

Referring to FIG. 13E, the metal layer 140 covering the stack structureis patterned to form stair-shaped metal layer patterns 142 in thecontact region CR. When the metal layer 140 is formed also on the topsurface of the stack structure, the uppermost metal layer 140 may becovered by a dielectric layer 150. Accordingly, the areas of the metallayer patterns 142 may decrease with an increase in the distance fromthe semiconductor substrate 100. That is, when the metal layer 140 ispatterned in a stair shape, gate electrodes 122 and 142 may be formed tohave a plate shape and decrease in area with an increase in the heightfrom the semiconductor substrate 100. Also, the gate electrodes 122 and142 may have the memory cell region MR including the conductive layers122, and the contact region CR including the metal layers 142.

When the metal layer patterns 142 are formed in the contact region CR,the metal layer 140 deposited on the uppermost dielectric layer 115 maybe patterned in separate line patterns 144. That is, line-shaped gateelectrodes 144 may be formed on the uppermost dielectric layer 115. Inthe memory cell region MR and the contact region CR, the uppermost gateelectrodes 144 may comprise metal material. The line-shaped gateelectrodes 144 formed on the stack structure are used as the upperselect lines (USL1˜USL3 of FIG. 1) in the exemplary embodiments of theinventive concept. Also, because the uppermost gate electrodes 144 areformed after the forming of the supporters 130, the supporters 130 donot penetrate the uppermost gate electrodes 144.

Also, as illustrated in FIG. 8, when a plurality of the supporters SPare formed in the contact region CR, the supporters 130 adjacent to eachother may also be etched in a stair shape during the forming of thestair-shaped metal layer patterns 142.

Referring to FIG. 13F, after the forming of the gate electrodes on thesemiconductor substrate 100, a dielectric layer 160 may be formed tofully cover the stacked gate electrodes. Active pillars 174 penetratingthe stacked gate electrodes, and a charge storage layer 172 surroundingthe active layers 174, may be formed in the memory cell region MR.Specifically, a plurality of channel holes are formed to penetrate theinterlayer dielectrics 110 and the conductive layers 122 stacked in thememory cell region MR. The channel holes may be formed by forming a maskpattern (not illustrated) on the uppermost dielectric layer 150 andselectively and anisotropically etching the stacked interlayerdielectrics 110 and conductive layers 122 by means of the mask pattern.The formed channel holes may expose the impurity region 102 of thesemiconductor substrate 100. Also, the channel holes may be formed in amatrix configuration on the plane.

Thereafter, a charge storage layer 172 is deposited conformally alongthe surface of the channel holes. That is, the charge storage layer 172may be formed on the sidewalls of the conductive layers 122 and theinterlayer dielectrics 110 exposed by the channel holes. In an exemplaryembodiment, the charge storage layer 172 may be formed by sequentiallydepositing a charge tunneling layer, a charge trapping layer, and acharge blocking layer. That is, an oxide layer, a nitride layer, and anoxide layer may be sequentially formed on the surface of the channelholes.

The channel holes including the charge storage layer 172 is filled withsemiconductor material to form active pillars 174. The filling of thechannel holes with semiconductor material may include: performing anepitaxial process using the semiconductor substrate 100 as a seed layer;or depositing semiconductor material. The semiconductor material may bemonocrystalline or polycrystalline semiconductor material. Thereafter,the semiconductor material filling the channel holes may be planarizedto expose the top surface of the uppermost dielectric layer 150.

Referring to FIG. 13G, contacts (CT of FIG. 2A) may be formed to beconnected respectively to the gate electrodes 142 of the contact regionCR. Because the gate electrodes 142 of the contact region CR are formedin a stair shape, the contacts may differ in length.

After the forming of the contacts, bit lines 180 are formed to beconnected to the active pillars 174. The bit lines 174 are formed acrossthe uppermost gate electrodes 144. At the formation of the bit lines180, global word lines (GWL of FIG. 2) connected to the gate electrodes142 of each layer may be formed on the contacts.

A method for fabricating the nonvolatile memory devices according to thesecond and fifth exemplary embodiments of the inventive concept will bedescribed in detail with reference to FIGS. 14A to 14F.

FIGS. 14A to 14F are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the second andfifth exemplary embodiments of the inventive concept, which are takenalong the line of FIG. 10.

Referring to FIG. 14A, first and second dielectric layers 210 and 215with different etch selectivity are alternately staked on asemiconductor substrate 200 including a memory cell region MR and acontact region CR. Specifically, the first and second dielectric layers210 and 215 are formed of materials with different wet etch rates. Forexample, the first and second dielectric layers 210 and 215 may beformed of silicon oxide and silicon nitride, respectively.

Thereafter, active pillars 224 penetrating the first and seconddielectric layers 210 and 215 and a charge storage layer 222 surroundingthe active pillars 224 are formed in the memory cell region MR.

Specifically, a plurality of channel holes penetrating the stacked firstand second dielectric layers 210 and 215 are formed in the memory cellregion MR. The channel holes may be formed through a photolithographyprocess. The channel holes may expose an impurity region 202 of thesemiconductor substrate 200, and may be formed in a matrix configurationon the plane in the memory cell region MR. Thereafter, a charge storagelayer 222 is formed conformally along the surface of the channel holes,and the deposited charge storage layer is anisotropically etched toleave the charge storage layer 222 only on the sidewalls of the firstand second dielectric layers 210 and 215 and expose the surface of thesemiconductor substrate 200. For example, the charge storage layer 222may be formed by sequentially depositing a charge tunneling layer, acharge trapping layer, and a charge blocking layer. Thereafter, thechannel holes are filled with semiconductor material to form activepillars 224. The semiconductor material may be monocrystalline orpolycrystalline semiconductor material. Also, the forming of the activepillars 224 may include: performing an epitaxial process using thesemiconductor substrate 200 as a seed layer; or depositing semiconductormaterial. Thereafter, the semiconductor material filling the channelholes may be planarized to expose the top surface of the uppermost firstdielectric layer 210.

Referring to FIG. 14B, supporters 230 penetrating the first and seconddielectric layers 210 and 215 are formed in the contact region CR. Morespecifically, a plurality of dummy holes for supporters 230 are formedaround the memory cell region MR. The dummy holes may expose the surfaceof the semiconductor substrate 200. Thereafter, the dummy holes arefilled with dielectric material, and the top portion is planarized toform pillar-shaped supporters 230.

Specifically, the supporters 230 may be formed on the same line as theactive pillars 224 of the memory cell region MR, and may besymmetrically formed with the memory cell region MR therebetween. Thatis, the supporters 230 may be formed in one-to-one correspondence witheach of both sides of the memory cell region MR as illustrated in FIG.5, or may be formed in plurality at each of the both sides of the memorycell region MR as illustrated in FIG. 10. A plurality of the supporters230 formed at both sides of the memory cell region MR may be spacedapart from each other by a predetermined distance.

Referring to FIG. 14C, the first and second dielectric layers 210 and215 of the contact region CR, with the supporters 230 formed therein,are patterned in a stair shape.

The heights of the first and second dielectric layers 210 and 215decrease toward the edge of the contact region CR. The supporters 230 ofthe contact region CR may also be etched simultaneously with thepatterning of the first and second dielectric layers 210 and 215 in astair shape. That is, the supporter adjacent to the memory cell regionMR penetrates all of the first and second dielectric layers 210 and 215,and the other supporters may be etched sequentially. Therefore, if aplurality of the supporters 230 are formed at both sides of the memorycell region MR, the lengths of the supporters 230 decrease toward theedge of the contact region CR.

On the other hand, if the supporters 230 are formed in one-to-onecorrespondence with each of both sides of the memory cell region MR, thesupporters 230 are not etched during the patterning of the first andsecond dielectric layers 210 and 215 in a stair shape. That is, thesupporters 230 may penetrate all of the first and second dielectriclayers 210 and 215.

After the patterning of the first and second dielectric layers 210 and215 of the contact region CR in a stair shape, a dielectric layer 240may be formed on the stair-shaped first and second dielectric layers 210and 215.

Thereafter, the first and second dielectric layers 210 and 215, stackedin a plate shape across the memory cell region MR and the contact regionCR, are patterned to form line-shaped stack structures. The patterningof the first and second dielectric layers 210 and 215 in a line shapemay be performed before the forming of the active pillars 224 or thesupporters 230. The line-shaped stack structure may expose the sidewallsof the first and second dielectric layers 210 and 215, and may includethe aligned active pillars 224 and supporters 230.

Referring to FIG. 14D, the second dielectric layers 215 formed betweenthe first dielectric layers 210 are removed. Specifically, an etchanthaving a high etch selectivity with respect to the second dielectriclayers 215 may be supplied to the semiconductor substrate 200 with theline-shaped stack structures to remove the second dielectric layers 215.Accordingly, an empty space is formed between the first dielectriclayers 210, and the first dielectric layers 210 spaced apart from eachother may be supported by the supporters 230 of the contact region CRand the active pillars 224 of the memory cell region MR.

Referring to FIG. 14E, the space between the first dielectric layers 210may be filled with conductive material to form line-shaped gateelectrodes 250. Specifically, when conductive material is depositedbetween the first dielectric layers 210, a conductive layer 250surrounding the supporters 230 and the active pillars 224 may be formedbetween the first dielectric layers 210. Thereafter, the conductivelayer 250 filling the space between the adjacent line-shaped stackstructures may be removed to form line-shaped gate electrodes 250. Theconductive material may be polysilicon or metal material.

Referring to FIG. 14F, contact plugs 260, connected respectively to thegate electrodes 250 of each layer, are formed in the contact region CRof the gate electrodes 250. Because the gate electrodes 250 of thecontact region CR are formed in a stair shape, the contact plugs 260 maydiffer in length.

Bit lines 270, which are electrically connected to the active pillars224 and intersect the gate electrodes 250, are formed after the formingof the contact plugs 260. Also, global word lines 275 may be formed onthe contact plugs 260.

Another method for fabricating the nonvolatile memory devices accordingto the second and fifth exemplary embodiments of the inventive conceptwill be described below with reference to FIGS. 15A to 15E.

FIGS. 15A to 15E are sectional views illustrating another method forfabricating the nonvolatile memory devices according to the second andfifth exemplary embodiments of the inventive concept, which are takenalong the line of FIG. 10.

Referring to FIG. 15A, first and second dielectric layers 210 and 215with different etch selectivity are alternately stacked on asemiconductor substrate 200, and a plate-shaped stack structure isformed across a memory cell region MR and a contact region CR. That is,the sidewalls of the stacked first and second dielectric layers 210 and215 are aligned.

In the plate-shaped stack structure, the first and second dielectriclayers 210 and 215 stacked on the contact region CR are patterned in astair shape. That is, on the contact region CR, the stack height of thefirst and second dielectric layers 210 and 215 decreases toward theedge.

Thereafter, the plate-shaped stack structure is covered with adielectric layer, and it is planarized to equalize the heights of thememory cell region MR and the contact region CR. That is, a dielectriclayer 240 may be formed on the stair-shaped stack structure.

Referring to FIG. 15B, active pillars 224 a are formed in the memorycell region MR and supporters 224 b are formed in the contact region CR.

More specifically, channel holes are formed in the memory cell region MRand dummy holes are formed in the contact region CR. The channel holesand the dummy holes may be formed through a photolithography process,and the channel holes may be formed in a matrix configuration on theplane. Also, as illustrated in FIG. 5, the dummy holes may be formedrespectively at one side of the channel holes located at the edge of thememory cell region MR. Also, as illustrated in FIG. 10, the dummy holesmay be formed on the same line as the channel holes, and the dummy holeson the same line are spaced apart from each other. The dummy holeadjacent to the channel hole may penetrate all of the stacked first andsecond dielectric layers 210 and 215. Also, the number of the penetratedfirst and second dielectric layers 210 and 215 may decrease with anincrease in the distance from the memory cell region MR.

Thereafter, charge storage layers 222 a and 222 b are formed at thesidewalls of the dummy holes and the channel holes, and the dummy holesand the channel holes are filled with semiconductor material to formactive pillars 224 a and supporters 224 b. That is, charge storagelayers 222 a and 222 b may be formed around the supporters 224 b of thecontact region CR and the active pillars 224 a of the memory cell regionMR. Also, the active pillars 224 a and the supporters 224 b may beformed to the same length. The active pillars 224 a of the memory cellregion MR may penetrate all of the stacked first and second dielectriclayers 210 and 215, and the supporters 224 b of the contact region CRmay penetrate some of the stacked first and second dielectric layers 210and 215.

Referring to FIG. 15C, the plate-shaped stack structure including theactive pillars 224 a and the supporters 224 b are patterned to formline-shaped stack structures. When the line-shaped stack structures areformed, the sidewalls of the first and second dielectric layers 210 and215 may be exposed. Thereafter, an etchant having a high etchselectivity with respect to the first dielectric layer 210 are suppliedbetween the line-shaped stack structures to remove the second dielectriclayers 215. Accordingly, an empty space is formed between the firstdielectric layers 210 that are perpendicular to the semiconductorsubstrate 200 and are spaced apart from each other. The first dielectriclayers 210 spaced apart from each other may be supported by the activepillars 224 a of the memory cell region MR, which are perpendicular tothe semiconductor substrate 200, and the supporters 224 b of the contactregion CR. That is, the second dielectric layers 215 can be preventedfrom collapsing or getting near to each other during the removing of thesecond dielectric layers 215 through a wet etch process.

Referring to FIG. 15D, the space between the first dielectric layers 210may be filled with conductive material to form line-shaped gateelectrodes 250. Specifically, when conductive material is depositedbetween the first dielectric layers 210, conductive layers 250 may beformed around the active pillars 224 a and the supporters 224 b.Thereafter, the conductive layer 250 filling the space between theadjacent line-shaped stack structures may be removed to form line-shapedgate electrodes 250 between the first dielectric layers 210. Theconductive material may be polysilicon or metal material.

Referring to FIG. 15E, contact plugs 260, connected respectively to thegate electrodes 250 of each layer, are formed in the contact region CRof the gate electrodes 250. Because the gate electrodes 250 of thecontact region CR are formed in a stair shape, the contact plugs 260 maydiffer in length.

Bit lines 270, which are electrically connected to the active pillars224 and intersect the gate electrodes 250, are formed after the formingof the contact plugs 260. Also, global word lines 275 may be formed onthe contact plugs 260.

Because a conductive pattern such as the global word line 275 or the bitline 270 is not formed on the supporters 224 b, it does not affect theoperation of the nonvolatile memory device according to the exemplaryembodiment of the inventive concept.

A method for fabricating the nonvolatile memory devices according to thethird and sixth exemplary embodiments of the inventive concept will bedescribed below in brief with reference to FIGS. 16A to 16E.

With the exception of a method of forming the active pillars of thememory cell region, a method of forming the supporters of the contactregion of the nonvolatile memory device according to the third and sixthexemplary embodiments may be identical to that of the second and fifthexemplary embodiments. Thus, the method of forming the active pillars ofthe memory cell region will be described in brief with reference toFIGS. 16A to 16E.

FIGS. 16A to 16E are sectional views illustrating a method forfabricating the nonvolatile memory devices according to the third andsixth exemplary embodiments of the inventive concept, which are takenalong the lines A-A′ and B-B′ of FIG. 6.

Referring to FIG. 16A, first and second dielectric layers 210 and 215with different etch selectivity are alternately stacked on asemiconductor substrate 200. Line-shaped first trenches T1 exposing thesemiconductor substrate 200 are formed in the stacked first and seconddielectric layers 210 and 215. When the first trenches T1 are formed,the first sidewalls of the stacked first and second dielectric layers210 and 215 may be exposed.

Referring to FIG. 16B, active pillars 224 are formed on the firstsidewalls of the first and second dielectric layers 210 and 215 exposedby the first trenches T1. The active pillars 224 extend perpendicularlyto the semiconductor substrate 200. Also, a semiconductor layer isformed conformally along the surfaces of the first trenches, and thesemiconductor layer is anisotropically etched. Accordingly, the activepillars 224 may be formed to face each other. After the forming of theactive pillars 224, the first trenches T1 are filled with dielectricmaterial and it is planarized to form a dielectric layer 225 between thesemiconductor layers.

After the forming of the dielectric layer 225, the semiconductor layerformed at the first sidewalls of the first and second dielectric layers210 and 215 may be patterned. Accordingly, active pillars 224 spacedapart from each other may be formed on the first sidewalls of the firstand second dielectric layers 210 and 215.

Thereafter, supporters SP penetrating the first and second dielectriclayers 210 and 215 are formed in the contact region CR. The formationposition and method of the supporters SP are substantially identical tothose of the second and fourth exemplary embodiments.

Referring to FIG. 16C, line-shaped second trenches T2 are formed at thestacked first and second dielectric layers 210 and 215 to expose thesecond sidewalls of the first and second dielectric layers 210 and 215.The second trenches T2 may be formed between the first trenches T1 toform line-shaped stack structures. The line-shaped stack structureincludes the supporters SP at the edge portion.

Referring to FIG. 16D, through a wet etch process, the second dielectriclayers 215 between the stacked first dielectric layers 210 are removed.Accordingly, second trenches T2′ exposing the sidewalls of the activepillars 224 may be formed. Herein, the supporters SP on the contactregion CR are formed of a material having an etch selectivity withrespect to the second dielectric layer 215, thus supporting the firstdielectric layers 210 vertically spaced apart by a predetermineddistance.

Referring to FIG. 16E, a charge storage layer 245 and a gate electrode250 are sequentially formed in the second trenches T2′. Thereafter, thecharge storage layer and a gate conductive layer may be patterned toform the charge storage layer 245 and the gate electrode 250 on/underthe first dielectric layers 210. That is, the gate conductive layer inthe second trench T2′ may be separated into the line-shaped gateelectrodes 250. Thereafter, the space between the line-shaped gateelectrodes 250 may be filled with a dielectric layer 255. Thereafter,bit lines 270 connected electrically to the active pillars 224 may beformed on the stacked gate electrodes 250.

A method for fabricating the nonvolatile memory devices according toanother exemplary embodiment of the inventive concept will be describedbelow in detail with reference to FIGS. 17 to 24.

FIGS. 17 to 24 are sectional views illustrating a method for fabricatinga nonvolatile memory device according to another exemplary embodiment ofthe inventive concept.

Referring to FIG. 17, first and second dielectric layers 110 and 115with different etch rates are alternately stacked on a semiconductorsubstrate 100 of a memory cell region to form a stack structure. Thesemiconductor substrate 100 may include an impurity region (or well)102, and the first and second dielectric layers 110 and 115 may bestacked on the impurity region. The number of the stacked first andsecond dielectric layers 110 and 115 may depend on the memory capacity,and the height of the stack structure increases with an increase in thememory capacity. Also, the second dielectric layer 115 may be formed ofa material with a higher wet etch rate than the first dielectric layer110. For example, the first and second dielectric layers 110 and 115 maybe formed of silicon oxide and silicon nitride, respectively, and may beformed of silicon oxides with different wet etch rates.

Referring to FIG. 18, active pillars 124 are formed in the centralportion of the stack structure (i.e., the memory cell region).

More specifically, channel holes, penetrating the first and seconddielectric layers 110 and 115 to expose the semiconductor substrate 100,are formed in the central portion of the stack structure (i.e., thememory cell region). The channel holes may be formed through aphotolithography process, and the channel holes may be formed in amatrix configuration in the plane of the substrate.

Thereafter, a charge storage layer 122 is formed on the inside walls ofthe channel holes, and the channel holes are filled with semiconductormaterial to form active pillars 124. The charge storage layer 122 may bedeposited conformally along the surfaces of the channel holes, and thecharge storage layer 122 deposited on the surface of the semiconductorsubstrate 100 may be removed. Specifically, the charge storage layer 122includes charge tunneling layer, a charge trapping layer, and a chargeblocking layer. In another exemplary embodiment, the charge storagelayer 122 may be formed through the subsequent process. That is, thecharge storage layer 122 may be formed to surround the active layers 124and vertical supporters.

The active pillars 124 may be formed by filling the channel holes withsemiconductor material. The semiconductor material may bemonocrystalline or polycrystalline semiconductor material. The activepillars 124 may be formed by performing an epitaxial process using thesemiconductor substrate 100 as a seed layer, or by depositingsemiconductor material. The active pillars 124 filling the channel holesmay be connected to the semiconductor substrate 100.

Thereafter, the stack structure including the active pillars 124 ispatterned to form line-type stack structures. Specifically, trenches 132penetrating the first and second dielectric layers 110 and 115 may beformed between the active pillars 124 to form line-type stackstructures.

The trenches 132 may be formed through a photolithography process, andthe impurity region 102 of the semiconductor substrate 100 may beexposed by the trenches 132. The trenches 132 may be formed in a lineshape, and may be formed to be parallel to each other and spaced apartfrom each other by a predetermined distance. In this manner, onesidewall of the stacked first and second dielectric layers 110 and 115may be exposed by the trenches 132.

Referring to FIG. 19, the trenches 132 between the line-type stackstructures are filled with a sacrificial dielectric layer 134, and it isplanarized to expose the uppermost first dielectric layer 110. Thesacrificial dielectric layer 134 may be formed of a material having anetch selectivity with respect to the first dielectric layer 110. In anexemplary embodiment, the sacrificial dielectric layer 134 may be formedof the same material as the second dielectric layer 115 so that it canbe removed simultaneously with the second dielectric layer 115 throughthe subsequent process. Thereafter, horizontal supporters 140 are formedon the line-type stack structures. The horizontal structures 140 serveto prevent the line-type stack structures (i.e., the active pillars 124)from collapsing while removing the second dielectric layers 115 of theline-type stack structures and forming conductive patterns between thefirst dielectric layers 110 in the subsequent processes.

FIGS. 20A and 20B illustrate the planar structure of the horizontalsupporters in the nonvolatile memory device fabrication method accordingto the exemplary embodiments of the inventive concept.

Referring to FIGS. 19 and 20A, the horizontal supporters 140 are formedacross the line-type stack structures, and may be formed to contact thetop surfaces of the line-type stack structures. Also, the horizontalsupporters 140 are spaced apart from each other to expose portions ofthe sacrificial dielectric layers 134.

Specifically, the horizontal supporters 140 may be formed by forming amaterial layer having an etch selectivity with respect to the seconddielectric layer 115 on the line-type stack structure and patterning thematerial layer in a line shape. The horizontal supporters 140 may beformed of the same dielectric material as the first dielectric layer110, and may also be formed of semiconductor material or metal material.That is, the horizontal supporters 140 intersect the line-type stackstructures while contacting the top surfaces of the line-type stackstructures. Also, the line-shaped horizontal supporters 140 may bedisposed on or between the active pillars 124.

Although the horizontal supporters 140 are described herein as beingdisposed perpendicular to the line-type stack structures, the inventiveconcept is not limited to this configuration. The horizontal supporters140 may intersect the top surfaces of the line-type stack structures atan angle.

Also, the horizontal supporters 140 may be formed at both side portionsof the active pillars 124 disposed in a matrix configuration. That is,the horizontal supporters 140 may be formed across the top surfaces ofthe line-type stack structures at the edge portions of the memory cellregion. That is, the interval (L) between the horizontal supporters 140may vary according to circumstances.

Also, the horizontal supporters 140 may have a portion extending betweenthe line-type stack structures (not illustrated). That is, the spacebetween the portions extending from the horizontal supporters 140 may befilled with the sacrificial dielectric layer 134.

Referring to FIG. 20B, horizontal supporters 140′ may include localpatterns contacting the top surfaces of the line-type stack structuresadjacent to each other.

Specifically, the space between the line-type stack structures is filledwith the sacrificial dielectric layer 134. Thereafter, a material layeris formed on the line-type stack structures. Thereafter, the materiallayer is patterned to form localized horizontal supporter patterns 140′across the line-type stack structures. The horizontal supporter patterns140′ may be square or circular patterns, and may be arranged in a matrixconfiguration or in a radiation configuration. In this manner, thehorizontal supporter patterns 140′ also contact the adjacent line-typestack structures to prevent the collapse of the line-type stackstructures.

Referring to FIG. 12, after the forming of the horizontal supporters140, the sacrificial dielectric layer 134 between the line-type stackstructures is removed to expose the sidewalls of the line-type stackstructures. That is, the sidewalls of the first and second dielectriclayers 110 and 115 are exposed. The sacrificial dielectric layer 134 maybe removed through an anisotropic or isotropic etch process. Forexample, a wet etchant may be supplied to the top surface of thesacrificial dielectric layer 134 to remove the sacrificial dielectriclayer 134. The horizontal supporters 140 are formed of a material havingan etch selectivity with respect to the sacrificial dielectric layer134. Therefore, when the sacrificial dielectric layer 134 is removed,the horizontal supporters 140 are left on the line-type stack structuresspaced apart from each other. Accordingly, the top surfaces of theline-type stack structures spaced apart from each other are fixed by thehorizontal supporters 140, thereby preventing the collapse of theline-type stack structures. That is, the horizontal supporters 140,which intersect the top surfaces of the line-type stack structuresspaced apart from each other, can maintain the interval between theline-type stack structures. Also, trenches may be reformed between theline-type stack structures.

Thereafter, in order to form conductive patterns (i.e., gate electrodes)between the vertically-stacked first dielectric layers 110, the seconddielectric layers 115 between the first dielectric layers 110 areremoved from the line-type stack structure. That is, openings 152exposing the charge storage layer 122 are formed between thevertically-stacked first dielectric layers 110. If the second dielectriclayers 115 are formed of the same material as the sacrificial dielectriclayer 134, the sacrificial dielectric layer 134 and the seconddielectric layers 115 may be sequentially removed through an isotropicetch process.

The horizontal supporters 140 may bee formed of a material having anetch selectivity with respect to the second dielectric layers 115.Therefore, the horizontal supporters 140 may be left on the top surfacesof the line-type stack structures during the removing of the seconddielectric layers 115. That is, the horizontal supporters 140 maintainthe interval between the line-type stack structures to prevent thecollapse of the line-type stack structures.

Referring to FIG. 22, after the removing of the second dielectric layers115, the openings 152 are filled with a conductive layer 160. Theconductive layer 160 may be formed of polysilicon, metal, silicide, or acombination thereof. At the filling of the openings 152 with theconductive layer 160, the space between the horizontally-adjacent firstdielectric layers 110 may also be filled with the conductive layer 160.

When the space between the first dielectric layers 110 is filled withthe conductive layer 160, the conductive layer 160 between thehorizontally-adjacent first dielectric layers 110 is anisotropicallyetched as illustrated in FIG. 23. That is, the trench 132 may bereformed between the first dielectric layers 110, so that localconductive patterns 162 are formed respectively in the openings 152.That is, the conductive patterns 162 of the respective layers may beseparated.

Also, in order to remove the conductive layers 160 between the firstdielectric layers 110, a portion of the horizontal supporter 140intersecting the line-type stack structures may be removed. If thehorizontal supporters 140 are formed of semiconductor material orconductive material, the horizontal supporters 140 may be removed afterthe forming of the conductive patterns 162 in the openings 152.

As the local conductive patterns 162 are formed in the openings 152,three-dimensional word lines may be formed on the semiconductorsubstrate 100. Also, the active pillars 124 are connected to thesemiconductor substrate 100 by penetrating the stacked conductive lines.

According to another exemplary embodiment of the inventive concept,after the openings 152 are formed between the vertically-adjacent firstdielectric layers 110, the conductive patterns 162 may be formedselectively in the openings 152 through a selective deposition orplating process. After the filling of the openings 152 with theconductive layer, a process of separating the conductive patterns 162 ofthe respective layer may be omitted.

After the forming of the local conductive patterns 162 in the openings152, the space between the horizontally-adjacent conductive patterns 162is filled with a dielectric layer 170. The space between thehorizontally-adjacent conductive patterns 162 may be filled with thedielectric layer 170 up to the horizontal supporters 142. That is, afterthe forming of the three-dimensional conductive patterns 162 on thesemiconductor substrate 100, the horizontal supporters 142 may beprovided as a portion of the dielectric layer.

Referring to FIG. 24, bit lines 184 connected through contact plugs 182to the active pillars 124 may be formed on the dielectric layer 170 andthe horizontal supporters 142. The bit lines 184 may be formed acrossthe three-dimensional word lines 162.

In the fabrication of the nonvolatile memory device, the horizontalsupporters 124 described with reference to FIGS. 17 and 24 may becombined with the aforesaid vertical supporters 230 and 224 b.

FIG. 25 is a block diagram of a memory system including a nonvolatilememory device according to exemplary embodiments of the inventiveconcept.

Referring to FIG. 25, a memory system 1100 may be applicable to PDAs,portable computers, Web tablets, wireless phones, mobile phones, digitalmusic players, memory cards, or any device that can transmit and/orreceive information in wireless environments.

The memory system 1100 includes a controller 1110, an input/outputdevice 1120 (e.g., a keypad, a keyboard, and a display), a memory 1130,an interface 1140, and a bus 1150. The memory 1130 and the interface1140 communicate with each other through the bus 1150.

The controller 1110 includes at least one microprocessor, a digitalsignal processor, a microcontroller, or other similar processors. Thememory 1130 may be used to store commands executed by the controller1110. The input/output device 1120 may receive data or signals from theoutside of the memory system 1100, or may output data or signals to theoutside of the memory system 1100. For example, the input/output device1120 may include a keyboard unit, a keypad unit, or a display unit.

The memory 1130 includes the nonvolatile memory devices according to theembodiments of the inventive concept. The memory 1130 may furtherinclude random-access volatile memories and other various types ofmemories.

The interface 1140 serves to transmit/receive data to/from acommunication network.

FIG. 26 is a block diagram of a memory card provided with a flash memorydevice according to an exemplary embodiment of the inventive concept.

Referring to FIG. 26, a memory card 1200 is provided with a flash memorydevice 1210 according to the inventive concept to support high-capacitydata storage capability. The memory card 1200 includes a memorycontroller 1220 that controls data exchange between a host and the flashmemory device 1210.

An SRAM 1221 is used as a working memory of a central processing unit(CPU) 1222. A host interface (I/F) 1223 has data exchange protocol of ahost connected to the memory card 1200. An error correction block (ECC)1224 detects and corrects an error in data read from the multi-bit flashmemory device 1210. A memory interface (I/F) 1225 interfaces with theflash memory device 1210. The CPU 1222 performs an overall controloperation for data exchange of the memory controller 1220. Although notillustrated in FIG. 26, it will be apparent to those skilled in the artthat the memory card 1200 may further include a ROM storing code datafor interfacing with the host.

FIG. 27 is a block diagram of an information processing system providedwith a flash memory system according to the inventive concept.

Referring to FIG. 27, an information processing system 1300, such as amobile device and a desktop computer, is provided with a flash memorysystem 1310 according to the inventive concept. The informationprocessing system 1300 includes a flash memory system 1310, a modem1320, a central processing unit (CPU) 1330, a RAM 1340, and a userinterface 1350 that are electrically connected to a system bus 1360. Theflash memory system 1310 may have substantially the same configurationas the aforementioned memory system or flash memory system. Dataprocessed by the CPU 1330 or external input data is stored in the flashmemory system 1310. The flash memory system 1310 may be configured witha semiconductor disk device (SSD). In this case, the informationprocessing system 1300 can stably store high-capacity data in the flashmemory system 1310. Also, as the reliability of the semiconductor deviceis improved, the flash memory system 1310 can save resources consumed inerror correction, thus providing a high-speed data exchange function tothe information processing system 1300. Although not illustrated in FIG.27, it will be apparent to those skilled in the art that the informationprocessing system 1300 may further include an application chipset, acamera image processor (CIS), and an input/output device.

Also, the flash memory device or the memory system according to theinventive concept may be mounted in various types of packages. Examplesof the packages of the flash memory device or the memory systemaccording to the inventive concept include Package on Package (PoP),Ball Grid Arrays (BGAs), Chip Scale Packages (CSPs), Plastic Leaded ChipCarrier (PLCC), Plastic Dual In-line Package (PDIP), Die in Waffle Pack,Die in Wafer Form, Chip On Board (COB), Ceramic Dual In-line Package(CERDIP), Plastic Metric Quad Flat Pack (MQFP), Thin Quad Flat Pack(TQFP), Small Outline Integrated Circuit (SOIC), Shrink Small OutlinePackage (SSOP), Thin Small Outline Package (TSOP), Thin Quad Flat Pack(TQFP), System In Package (SIP), Multi Chip Package (MCP), Wafer-levelFabricated Package (WFP), and Wafer-level Processed Stack Package (WSP).

As described above, according to the three-dimensional nonvolatilememory device of the inventive concept, the supporters are formed in thecontact region, thereby making it possible to support the edge portionsof the stacked gate electrodes. Also, when the wet etch process isperformed for fabrication of the three-dimensional nonvolatile memorydevice, the interlayer dielectrics can be prevented from collapsingduring the wet etch process.

Also, some or all of the three-dimensional stacked gate electrodes arecomprised of metal material, thereby making it possible to reduce theresistance of the gate electrode. Therefore, the operation speed of thethree-dimensional nonvolatile memory device can be improved.

Also, according to the method for fabricating the three-dimensionalnonvolatile memory device of the inventive concept, the horizontalsupporters are formed across the top surfaces of the line-type stackstructures in order to form the three-dimensional conductive lines.Accordingly, the top surfaces of the high line-type stack structures canbe fixed by the horizontal supporters. Therefore, the line-type stackstructure can be prevented from inclining or collapsing when forming theopenings between the stacked first dielectric layers.

Also, the vertical supporters penetrating the stacked dielectric layersare formed at the edge portions of the line-type stack structure,thereby making it possible to prevent the first dielectric layers fromcollapsing when forming the openings between the stacked firstdielectric layers.

The above-disclosed subject matter is to be considered illustrative andnot restrictive, and the appended claims are intended to cover all suchmodifications, enhancements, and other embodiments, which fall withinthe true spirit and scope of the inventive concept. Thus, to the maximumextent allowed by law, the scope of the inventive concept is to bedetermined by the broadest permissible interpretation of the followingclaims and their equivalents, and shall not be restricted or limited bythe foregoing detailed description.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: forming a first alternating stack of first dielectriclayers and first sacrificial dielectric layers on a substrate; forming aplurality of dielectric supporter structures through the firstalternating stack in a contact region; forming a second alternatingstack of second dielectric layers and second sacrificial dielectriclayers on the first alternating stack and the plurality of dielectricsupporter structures; patterning the first alternating stack and thesecond alternating stack to form first stepped surfaces on the firstalternating stack and second stepped surfaces on the second alternatingstack; forming a plurality of channel structures vertically extendingthrough each layer of the first alternating stack and the secondalternating stack in a memory cell region; and replacing remainingportions of the first sacrificial dielectric layers and the secondsacrificial dielectric layers with first conductive layers and secondconductive layers, wherein the plurality of dielectric supporterstructures include at least one dielectric material and extend throughthe first alternating stack, and wherein the plurality of dielectricsupporter structures have different heights.
 2. The method of claim 1,further comprising forming a plurality of supporters through the firstalternating stack and the second stepped surfaces, wherein each of theplurality of supporters includes a semiconductor material.
 3. The methodof claim 1, further comprising forming a dielectric portion over thefirst stepped surfaces on the first alternating stack and the secondstepped surfaces on the second alternating stack, wherein the dielectricportion contacts the plurality of dielectric supporter structures. 4.The method of claim 3, further comprising: forming a plurality of firstdummy holes through the first alternating stack and the secondalternating stack in the memory cell region; forming a plurality ofsecond dummy holes through the dielectric portion, the first alternatingstack, and a region of the second alternating stack that underlies thesecond stepped surfaces; and forming the plurality of channel structuresin the plurality of first dummy holes and the plurality of dielectricsupporter structures in the plurality of second dummy holes.
 5. Themethod of claim 1, wherein the patterning the first alternating stackand the second alternating stack includes: applying a mask pattern overthe second alternating stack; and performing an anisotropic etch processthat etches at least one pair of the first dielectric layers and thefirst sacrificial dielectric layers or at least one pair of the seconddielectric layers and the second sacrificial dielectric layers.
 6. Amethod of forming a semiconductor device, the method comprising: formingat least one alternating stack of dielectric layers and sacrificialdielectric layers on a substrate including an impurity region; forming afirst dummy hole and a second dummy hole through the at least onealternating stack; forming an oxide layer on a surface of the firstdummy hole; forming a semiconductor material portion in contact with theimpurity region in the first dummy hole by performing a selectivedeposition process; and forming a channel structure in the first dummyhole and a supporter in the second dummy hole, wherein the sacrificialdielectric layers are formed as, or are subsequently replaced with,conductive layers, wherein the channel structure includes thesemiconductor material portion, and wherein the supporter includes adielectric material.
 7. The method of claim 6, further comprisinganisotropically etching the oxide layer.
 8. The method of claim 6,further comprising depositing a charge storage layer directly on asurface of the semiconductor material portion.
 9. The method of claim 6,wherein the semiconductor material portion is a monocrystallinesemiconductor material.
 10. The method of claim 6, wherein the selectivedeposition process includes an epitaxial process.
 11. The method ofclaim 6, further comprising applying a mask over the at least onealternating stack.
 12. The method of claim 6, further comprisingdepositing a charge tunneling layer and a charge blocking layer.
 13. Amethod of forming a semiconductor device, the method comprising: forminga first alternating stack of first dielectric layers and firstsacrificial dielectric layers on a substrate; forming a plurality ofdielectric supporter structures through the first alternating stack in acontact region; forming a second alternating stack of second dielectriclayers and second sacrificial dielectric layers on the first alternatingstack and the plurality of dielectric supporter structures; patterningthe first alternating stack and the second alternating stack to formfirst stepped surfaces on the first alternating stack and second steppedsurfaces on the second alternating stack; forming a plurality of channelstructures vertically extending through each layer of the firstalternating stack and the second alternating stack in a memory cellregion; and replacing remaining portions of the first sacrificialdielectric layers and the second sacrificial dielectric layers withfirst conductive layers and second conductive layers.
 14. The method ofclaim 13, wherein each of the plurality of channel structures includes asemiconductor material portion.
 15. The method of claim 13, wherein theplurality of dielectric supporter structures include at least onedielectric material and extend through the first alternating stack. 16.The method of claim 13, wherein the plurality of dielectric supporterstructures include a first supporter structure and a second supporterstructure, a distance between the first supporter structure and thememory cell region is less than a distance between the second supporterstructure and the memory cell region, and a height of the firstsupporter structure is greater than a height of the second supporterstructure.
 17. The method of claim 13, further comprising forming aplurality of contact plugs electrically connected to the firstconductive layers.
 18. The method of claim 13, wherein the forming theplurality of channel structures includes forming a plurality of chargestorage layers and a plurality of active layers.
 19. The method of claim13, further comprising forming a dielectric portion overlying the firststepped surfaces and the second stepped surfaces.
 20. The method ofclaim 19, wherein each of the plurality of dielectric supporterstructures includes an upper portion that is laterally surrounded by thedielectric portion.